Datasheet

KSC2073 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC2073 Rev. A1 2
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter On Voltage
Figure 5. Safe Operating Area Figure 6. Power Derating
0 5 10 15 20 25 30 35 40 45 50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
B
=1mA
I
B
=2mA
I
B
=3mA
I
B
=4mA
I
B
=5mA
I
B
=6mA
I
B
=7mA
I
B
=8mA
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10
10
100
1000
V
CE
=10V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
V
CE
(sat)
V
BE
(sat)
I
C
=10I
B
V
BE
(sat),V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
110100
10
100
1000
f=1MHz
I
E
=0
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
10 100
0.1
1
10
S/B limitation
S/B limitationThermal limitation
DC
*1mS
1.T
C
=25
o
C
2.*Single pulse
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR EMITTER VOLTAGE
0 25 50 75 100 125 150
0
5
10
15
20
25
30
35
40
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE