Datasheet

KSC2073 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC2073 Rev. A1 1
September 2011
KSC2073
NPN Epitaxial Silicon Transistor
Features
• TV Vertical Deflection Output
• Complement to KSA940
• Collector-Base Voltage : V
CBO
= 150V
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Electrical Characteristics T
A
= 25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 150 V
V
CEO
Collector-Emitter Voltage 150 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 1.5 A
P
C
Collector Dissipation (T
C
= 25°C) 25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 to 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= 500μA, I
E
= 0 150 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0 150 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 500μA, I
C
= 0 5 V
I
CBO
Collector Cut-off Current V
CB
= 120V, I
E
= 0 10 μA
h
FE
DC Current Gain V
CE
= 10V, I
C
= 0.5A 40 75 140
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 50mA 1 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 0.5A 4 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
= 0,
f = 1MHz
50 pF
Classification H1 H2
h
FE
40 ~ 80 60 ~ 125
1.Base 2.Collector 3.Emitter
1
TO-220