Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC1623
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 50 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 100 mA
P
C
Collector Power Dissipation 200 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
=60V, I
E
=0 0.1 µA
I
EBO
Emitter Cut-off Current V
EB
=5V, I
C
=0 0.1 µA
h
FE
DC Current Gain V
CE
=6V, I
C
=1mA 90 200 600
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=100mA, I
B
=10mA 0.15 0.3 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=100mA, I
B
=10mA 0.86 1.0 V
V
BE
(on) Base-Emitter On Voltage V
CE
=6V, I
C
=1mA 0.55 0.62 0.65 V
f
T
Current Gain Bandwidth Product V
CE
=6V, I
C
=10mA 250 MHz
C
ob
Output Capacitance V
CB
=6V, I
E
=0, f=1MHz 3 pF
Classification O Y G L
h
FE
90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600
1. Base 2. Emitter 3. Collector
KSC1623
Low Frequency Amplifier & High Frequency
OSC.
• Complement to KSA812
C1O
Marking
h
FE
grade
SOT-23
1
2
3