Datasheet

©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB596
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 80 V
V
CEO
Collector-Emitter Voltage - 80 V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current(DC) - 4 A
I
B
Base Current - 0.4 A
P
C
Collector Dissipation (T
C
=25°C) 30 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= - 50mA, I
B
= 0 - 80 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= - 10mA, I
C
= 0 - 5 V
I
CBO
Collector Cut-off Current V
CB
= - 80V, I
E
= 0 - 70 µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 100 µA
h
FE1
h
FE2
DC Current Gain V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
40
15
240
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= - 3A, I
B
= - 0.3A - 1 - 1.7 V
V
BE
(on) Base-Emitter ON Voltage V
CE
= - 5V, I
C
= - 3A - 1 - 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= - 5V, I
C
= - 0.5A 3 MHz
C
ob
Output Capacitance V
CB
= - 10V, I
E
= 0
f = 1MHz
130 pF
Classification R O Y
h
FE1
40 ~ 80 70 ~ 140 120 ~ 240
KSB596
Power Amplifier Applications
• Complement to KSD526
1.Base 2.Collector 3.Emitter
1
TO-220