Datasheet

©2000 Fairchild Semiconductor International
KSB1366
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
I
B
= -10mA
I
B
= -20mA
I
B
= -70mA
I
B
= -80mA
I
B
= -60mA
I
B
= -50mA
I
B
= -30mA
I
B
= -40mA
I
B
= 0
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.01 -0.1 -1 -10
1
10
100
1000
V
CE
= -5V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
-0.0 -0.4 -0.8 -1.2 -1.6
-0
-1
-2
-3
-4
V
CE
= -5V
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-1 -10 -100
-0.1
-1
-10
1S
DC
V
CEO
MAX
100mS
1mS
10ms
I
C
max(pulse)
I
C
max(DC)
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
P
D
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE