Datasheet

©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB1366
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 60 V
V
CEO
Collector-Emitter Voltage - 60 V
V
EBO
Emitter-Base Voltage - 7 V
I
C
Collector Current(DC) - 3 A
I
B
Base Current - 0.5 A
P
C
Collector Dissipation (T
a
=25°C) 2 W
P
C
Collector Dissipation (T
C
=25°C) 25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= - 50mA, I
B
= 0 - 60 V
I
CBO
Collector Cut-off Current V
CB
= - 60V, I
E
= 0 - 100 µA
I
EBO
Emitter Cut-off Current V
EB
= - 7V, I
C
= 0 - 100 µA
h
FE1
h
FE2
DC Current Gain V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
100
20
320
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= - 2A, I
B
= - 0.2A - 0.5 - 1 V
V
BE
(on) Base-Emitter ON Voltage V
CE
= - 5V, I
C
= - 0.5A - 0.7 - 1 V
f
T
Current Gain Bandwidth Product V
CE
= - 5V, I
C
= - 0.5A 9 MHz
Classification Y G
h
FE1
100 ~ 200 150 ~ 320
KSB1366
LOW FREQUENCY POWER AMPLIFIER
• Complement to KSD2012
1
1.Base 2.Collector 3.Emitter
TO-220F