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KSA1010

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

=25°C unless otherwise noted

* PW≤300µs, Duty Cycle≤10%

Symbol Parameter Value Units

CBO

Collector-Base Voltage - 100 V

CEO

Collector-Emitter Voltage - 100 V

EBO

Emitter-Base Voltage - 7 V

Collector Current (DC) - 7 A

*Collector Current (Pulse) - 15 A

Base Current - 3.5 A

Collector Dissipation (T

=25°C) 40 W

Collector Dissipation (T

=25°C) 1.5 W

Junction Temperature 150 °C

STG

Storage Temperature - 55 ~ 150 °C

KSA1010

High Speed High Voltage Switching

• Industrial Use

• Complement to KSC2334

1.Base 2.Collector 3.Emitter

TO-220

Summary of content (5 pages)

PAGE 1
KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 100 Units V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage -7 V IC Collector Current (DC) -7 A ICP *Collector Current (Pulse) - 15 A IB Base Current - 3.
PAGE 2
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = - 5A, IB1 = - 0.5A, L = 1mH Min. - 100 VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = - 5A, IB1 = - IB2 = - 0.5A VBE(off) = 5V, L = 180µH Clamped - 100 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = - 10A, IB1 = - 1A IB2 = 0.
PAGE 3
KSA1010 Typical Characteristics -5 IB = -100mA IB = 0m -8 A 1000 IB = -7 IB = -60mA 0m A IB = -50mA -4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = -90mA IB = -40mA -3 IB = -30mA IB = -20mA -2 IB = -10mA -1 -0 -0 -1 -2 -3 -4 VCE = -5.0V 100 10 1 -0.01 -5 -0.1 V CE[V], COLLECTOR-EMITTER VOLTAGE -10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -100 Lim ite d -1 s 0m 10 -0.01 -0.
PAGE 4
KSA1010 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev.
PAGE 5
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