Datasheet

KDT00030 / KDT00030A — Phototransistor Photo Detector
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
KDT00030 / KDT00030A Rev. 1.1.0 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only.
Electrical Characteristics
Values are at T
A
= 25°C and V
CE
= 5.0 V, unless specified otherwise.
Notes:
1. White fluorescent light (color temperature = 6,500 K).
2. Illuminance by CIE standard illuminant-A / 2856K incandescent lamp.
Symbol Parameter Min. Max. Unit
V
CE
Collector-Emitter Voltage
6V
T
OPR
Operating Temperature -40 +85 °C
T
STG
Storage Temperature -40 +100 °C
Symbol Parameter Conditions Min. Typ. Max. Units
I
L
(1) Light Current(1) E
V
= 100 lux
(1)
7
10
μA
I
L
(2) Light Current(2) E
V
= 1000 lux
(1)
200
230
μA
I
L
(3) Light Current(3) E
V
= 1000 lux
(2)
950
1100
μA
I
L
(3) / I
L
(2) Light Current Ratio 4.8
I
LEAK
Dark Current
V
CE
= 10 V,
E
V
= 0
KDT00030
100
nA
KDT00030A
40
V
O
Saturation Output Voltage
V
CC
= 5 V, E
V
= 1000 lux,
R
L
=75 kΩ
4.5 4.6 V
λ
P
Peak Sensitivity, Wavelength 630 nm