Datasheet

©2009 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
Figure 15. Breakdown Voltage vs Series Gate Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Characteristics (Continued)
C, CAPACITANCE (pF)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
3000
1000
500
1500
0105 152025
0
C
IES
FREQUENCY = 1 MHz
C
OES
C
RES
2500
2000
Q
G
, GATE CHARGE (nC)
V
GE
, GATE TO EMITTER VOLTAGE (V)
0
2
4
8
0 10203040
50
3
5
7
6
1
I
G(REF)
= 1mA, R
L
= 0.6Ω, T
J
= 25°C
V
CE
= 6V
V
CE
= 12V
BV
CER
, BREAKDOWN VOLTAGE (V)
R
G
, SERIES GATE RESISTANCE (kΩ)
360
352
348
356
10 20001000 3000
344
100
354
350
358
346
T
J
= - 40°C
T
J
= 25°C
T
J
= 175°C
I
CER
= 10mA
342
340
Z
thJC
, NORMALIZED THERMAL RESPONSE
T
1
, RECTANGULAR PULSE DURATION (s)
10
0
10
-2
10
-1
10
-2
10
-3
10
-4
10
-5
10
-1
10
-6
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ JC
X R
θ JC
) + T
C
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-3
10
-4