Datasheet

©2009 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
Typical Characteristics (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
50
40
02.01.0 3.0 4.0
30
T
J
= 175°C
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
20
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
2.01.0 3.0 4.0
50
40
30
0
2.51.5 3.5 4.5
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 5V
T
J
= 25°C
T
J
= 175°C
T
J
= -40°C
20
10
I
CE
, DC COLLECTOR CURRENT (A)
T
C
, CASE TEMPERATURE (°C)
50
25 1751257550 100 150
40
30
20
10
0
V
GE
= 4.0V
17550 100
2.0
1.8
1.6
1.4
1.0
V
TH
, THRESHOLD VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
1500 125
1.2
V
CE
= V
GE
I
CE
= 1mA
-50 7525-25
LEAKAGE CURRENT (µA)
T
J
, JUNCTION TEMPERATURE (°C)
1000
10
0.1
10000
100
1
25-25 17512575-50 0 50 100 150
V
ECS
= 24V
V
CES
= 300V
V
CES
= 250V
25 1751257550 100 150
T
J
, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (µS)
20
16
12
6
2
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1KΩ
Resistive t
OFF
Inductive t
OFF
Resistive t
ON
10
14
18
8
4