Datasheet

©2009 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Typical Characteristics
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
t
CLP
, TIME IN CLAMP (µS)
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
35
30
10
45
20
25
0
350300025010050 150 200
T
J
= 25°C
R
G
= 1KΩ, V
GE
= 5V,V
dd
= 14V
5
15
40
SCIS Curves valid for V
clamp
Voltages of <390V
T
J
= 150°C
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
0102468
L, INDUCTANCE (mHy)
T
J
= 150°C
R
G
= 1KΩ, V
GE
= 5V,V
dd
= 14V
T
J
= 25°C
SCIS Curves valid for V
clamp
Voltages of <390V
35
30
10
45
20
25
0
5
15
40
1.10
1.05
1.00
0.95
0.90
25-25 17512575-50 0 50 100 150
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 5.0V
V
GE
= 8.0V
I
CE
= 6A
V
GE
= 4.5V
0.85
25-25 17512575-50 0 50 100 150
1.25
1.20
1.15
1.10
1.05
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.00
T
J
, JUNCTION TEMPERATURE (°C)
I
CE
= 10A
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
40
02.01.0 3.0 4.0
50
30
10
0
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
T
J
= - 40°C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
40
0
50
30
02.01.0 3.0 4.0
20
10
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
T
J
= 25°C