Datasheet

©2009 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
V5036S ISL9V5036S3ST TO-263AB 330mm 24mm 800
V5036P ISL9V5036P3 TO-220AA Tube N/A 50
V5036S ISL9V5036S3 TO-262AA Tube N/A 50
V5036S ISL9V5036S3S TO-263AB Tube N/A 50
Symbol Parameter Test Conditions Min Typ Max Units
BV
CER
Collector to Emitter Breakdown Voltage I
C
= 2mA, V
GE
= 0,
R
G
= 1KΩ, See Fig. 15
T
J
= -40 to 150°C
330 360 390 V
BV
CES
Collector to Emitter Breakdown Voltage I
C
= 10mA, V
GE
= 0,
R
G
= 0, See Fig. 15
T
J
= -40 to 150°C
360 390 420 V
BV
ECS
Emitter to Collector Breakdown Voltage I
C
= -75mA, V
GE
= 0V,
T
C
= 25°C
30 - - V
BV
GES
Gate to Emitter Breakdown Voltage I
GES
= ± 2mA ±12 ±14 - V
I
CER
Collector to Emitter Leakage Current V
CER
= 250V,
R
G
= 1KΩ,
See Fig. 11
T
C
= 25°C- - 25 µA
T
C
= 150°C- - 1 mA
I
ECS
Emitter to Collector Leakage Current V
EC
= 24V, See
Fig. 11
T
C
= 25°C- - 1 mA
T
C
= 150°C- - 40 mA
R
1
Series Gate Resistance - 75 - Ω
R
2
Gate to Emitter Resistance 10K - 30K Ω
V
CE(SAT)
Collector to Emitter Saturation Voltage I
C
= 10A,
V
GE
= 4.0V
T
C
= 25°C,
See Fig. 4
- 1.17 1.60 V
V
CE(SAT)
Collector to Emitter Saturation Voltage I
C
= 15A,
V
GE
= 4.5V
T
C
= 150°C - 1.50 1.80 V
Q
G(ON)
Gate Charge I
C
= 10A, V
CE
= 12V,
V
GE
= 5V, See Fig. 14
-32-nC
V
GE(TH)
Gate to Emitter Threshold Voltage I
C
= 1.0mA,
V
CE
= V
GE,
See Fig. 10
T
C
= 25°C1.3 - 2.2 V
T
C
= 150°C0.75- 1.8V
V
GEP
Gate to Emitter Plateau Voltage I
C
= 10A, V
CE
= 12V - 3.0 - V
t
d(ON)R
Current Turn-On Delay Time-Resistive V
CE
= 14V, R
L
= 1Ω,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C, See Fig. 12
-0.74µs
t
rR
Current Rise Time-Resistive - 2.1 7 µs
t
d(OFF)L
Current Turn-Off Delay Time-Inductive V
CE
= 300V, L = 2mH,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C, See Fig. 12
- 10.8 15 µs
t
fL
Current Fall Time-Inductive - 2.8 15 µs
SCIS Self Clamped Inductive Switching T
J
= 25°C, L = 670 µH,
R
G
= 1KΩ, V
GE
= 5V, See
Fig. 1 & 2
- - 500 mJ
R
θJC
Thermal Resistance Junction-Case TO-263, TO-220, TO-262 - - 0.6 °C/W