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HGTG20N60A4D

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

The HGTG20N60A4D is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. This device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

moderately between 25

C and 150

C. The IGBT used is the

development type TA49339. The diode used in anti-parallel

is the development type TA49372.

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power

supplies.

Formerly Developmental Type TA49341.

Symbol

Features

• >100kHz Operation At 390V, 20A

• 200kHz Operation At 390V, 12A

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . . 55ns at T

= 125

• Low Conduction Loss

• Temperature Compensating SABER™ Model

www.fairchildsemi.com

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60A4D TO-247 20N60A4D

NOTE: When ordering, use the entire part number.

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet February 2009

Summary of content (9 pages)

PAGE 1
HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339.
PAGE 2
HGTG20N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
HGTG20N60A4D Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Diode Forward Voltage TEST CONDITIONS VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC MIN TYP MAX UNITS IEC = 20A - 2.3 - V IEC = 20A, dIEC/dt = 200A/μs - 35 - ns IEC = 1A, dIEC/dt = 200A/μs - 26 - ns IGBT - - 0.43 oC/W Diode - - 1.9 oC/W NOTE: 1.
PAGE 4
HGTG20N60A4D 100 Unless Otherwise Specified (Continued) DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250μs 80 60 40 TJ = 125oC 20 TJ = 25oC TJ = 150oC 0 0.4 0 0.8 1.2 1.6 2.0 2.4 2.8 3.2 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 100 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250μs 80 60 40 TJ = 125oC 20 TJ = 150oC 0 0 FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1.2 1.6 2.0 2.4 2.
PAGE 5
HGTG20N60A4D Typical Performance Curves Unless Otherwise Specified (Continued) 80 RG = 3Ω, L = 500μH, VCE = 390V RG = 3Ω, L = 500μH, VCE = 390V 72 110 VGE = 12V, VGE = 15V, TJ = 125oC tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 120 100 90 80 TJ = 125oC, VGE = 12V OR 15V 56 48 TJ = 25oC, VGE = 12V OR 15V 40 32 VGE = 12V, VGE = 15V, TJ = 25oC 70 60 64 24 5 10 15 20 25 30 35 16 40 5 10 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR
PAGE 6
HGTG20N60A4D Unless Otherwise Specified (Continued) 5 C, CAPACITANCE (nF) FREQUENCY = 1MHz 4 3 CIES 2 1 COES CRES 0 0 20 40 60 80 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Typical Performance Curves 2.2 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250μs 2.1 2.0 ICE = 30A ICE = 20A 1.9 1.8 1.7 ICE = 10A 8 9 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 11 12 13 14 15 90 DUTY CYCLE < 0.
PAGE 7
HGTG20N60A4D ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 t1 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-5 10-4 10-3 10-2 PD t2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23.
PAGE 8
HGTG20N60A4D Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device.
PAGE 9
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