Datasheet

©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Typical Performance Curves (Unless Otherwise Specified) (Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
50
C, CAPACITANCE (pF)
100
150
250
300
200
350
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
4
02
0
410
2
6
68
1
3
5
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, T
C
= 110
o
C
V
GE
= 12V
V
GE
= 10V
V
GE
= 15V
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θJC
, NORMALIZED THERMAL RESPONSE
0.005
0.01
1.0
10
-3
10
-2
10
-1
10
0
10
-4
10
-5
2.0
0.1
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
SINGLE PULSE
0.1
0.01
0.02
0.5
0.05
0.2
R
G
= 82Ω
L = 4mH
V
DD
= 960V
+
-
RHRD4120
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
I
CE
HGTD1N120BNS, HGTP1N120BN