Datasheet

©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves (Unless Otherwise Specified) (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10 1.5 2 2.5 3
t
d(ON)I
, TURN-ON DELAY TIME (ns)
8
12
20
16
24
R
G
= 82Ω, L = 4mH, V
CE
= 960V
T
J
V
GE
25
o
C
13V
150
o
C
13V
25
o
C
15V
150
o
C
15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
1
4
8
24
20
12
20.5
16
1.5 2.5
28
3
R
G
= 82Ω, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
12
64
1.5
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
2.5
84
72
76
30.5
60
68
80
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
R
G
= 82Ω, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 25
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
0.5 1 2
160
240
1.5
120
280
360
2.5 3
320
200
R
G
= 82Ω, L = 4mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 13V OR 15V
T
J
= 150
o
C, V
GE
= 13V OR 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
2
4
6
137 8 9 10 12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
8
10
12
14 15
14
16
18
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 20V
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
15
3
6
0
0208412
9
12
16
I
G(REF)
= 1mA, R
L
= 600Ω, T
C
= 25
o
C
V
CE
= 1200V
V
CE
= 800V
V
CE
= 400V
HGTD1N120BNS, HGTP1N120BN