Datasheet
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 1.0A
V
CE
= 960V
V
GE
= 15V
R
G
= 82
Ω
L = 4mH
Test Circuit (Figure 18)
-1520ns
Current Rise Time t
rI
-1114ns
Current Turn-Off Delay Time t
d(OFF)I
-6776ns
Current Fall Time t
fI
- 226 300 ns
Turn-On Energy (Note 5) E
ON1
-70 - µJ
Turn-On Energy (Note 5) E
ON2
- 172 187 µJ
Turn-Off Energy (Note 4) E
OFF
- 90 123 µJ
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 1.0 A
V
CE
= 960V
V
GE
= 15V
R
G
= 82
Ω
L = 4mH
Test Circuit (Figure 18)
-1317ns
Current Rise Time t
rI
-1115ns
Current Turn-Off Delay Time t
d(OFF)I
-7588ns
Current Fall Time t
fI
- 258 370 ns
Turn-On Energy (Note 5) E
ON1
- 145 - µJ
Turn-On Energy (Note 5) E
ON2
- 385 440 µJ
Turn-Off Energy (Note 4) E
OFF
- 120 175 µJ
Thermal Resistance Junction To Case R
θJC
- - 2.1
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
Typical Performance Curves (Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECTOR CURRENT (A)
50
0
4
5
1
25 75 100 125 150
3
2
6
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
2
600 800400200 1000 1200
0
4
6
5
7
T
J
= 150
o
C, R
G
= 82Ω, V
GE
= 15V, L = 2mH
HGTD1N120BNS, HGTP1N120BN