Datasheet
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
5.3 A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
2.7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
6A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±
20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
±
30 V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/
o
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
10 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
260
o
C
Short Circuit Withstand Time (Note 3) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
µ
s
Short Circuit Withstand Time (Note 3) at V
GE
= 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
13
µ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. I
CE
= 7A, L = 400
µ
H, V
GE
= 15V, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 82
Ω.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250
µ
A, V
GE
= 0V 1200 - - V
Emitter to Collector Breakdown Voltage BV
ECS
I
C
= 10mA, V
GE
= 0V 15 - - V
Collector to Emitter Leakage Current I
CES
V
CE
= 1200V T
C
= 25
o
C - - 250
µ
A
T
C
= 125
o
C - 20 -
µ
A
T
C
= 150
o
C - - 1.0 mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 1.0A
V
GE
= 15V
T
C
= 25
o
C - 2.5 2.9 V
T
C
= 150
o
C - 3.8 4.3 V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 50
µ
A, V
CE
= V
GE
6.0 7.1 - V
Gate to Emitter Leakage Current I
GES
V
GE
=
±
20V - -
±
250 nA
Switching SOA SSOA T
J
= 150
o
C, R
G
= 82
Ω,
V
GE
= 15V,
L = 2mH, V
CE(PK)
= 1200V
6- - A
Gate to Emitter Plateau Voltage V
GEP
I
C
= 1.0A, V
CE
= 600V - 9.2 - V
On-State Gate Charge Q
G(ON)
I
C
= 1.0A
V
CE
= 600V
V
GE
= 15V - 14 20 nC
V
GE
= 20V - 15 21 nC
HGTD1N120BNS, HGTP1N120BN