Datasheet

©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
HGTD1N120BNS, HGTP1N120BN
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are N on- P unch
T hrough (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49316.
Symbol
Features
• 5.3A, 1200V, T
C
= 25
o
C
• 1200V Switching SOA Capability
• Typical E
OFF
. . . . . . . . . . . . . . . . . . 120 µ J at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
JEDEC TO-252AA
Ordering Information
PART NUMBER PACKAGE BRAND
HGTD1N120BNS TO-252AA 1N120B
HGTP1N120BN TO-220AB 1N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
C
E
G
E
C
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet January 2001