Datasheet

FSBB30CH60F Motion SPM® 3 Series
©2006 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FSBB30CH60F Rev. C6
Electrical Characteristics (T
J
= 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
3. t
ON
and t
OFF
include the propagation delay of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Parameter Conditions Min. Typ. Max. Unit
V
CE(SAT)
Collector - Emitter
Saturation Voltage
V
CC
= V
BS
= 15 V
V
IN
= 5 V
I
C
=30 A, T
J
= 25°C - - 2.75 V
V
F
FWDi Forward Voltage V
IN
= 0 V I
C
=30 A, T
J
= 25°C - - 2.4 V
HS t
ON
Switching Times V
PN
= 300 V, V
CC
= V
BS
= 15 V
I
C
= 30 A
V
IN
= 0 V  5 V, Inductive Load
(2nd Note 3)
-0.49- s
t
C(ON)
-0.34- s
t
OFF
-0.86- s
t
C(OFF)
-0.52- s
t
rr
-0.10- s
LS t
ON
V
PN
= 300 V, V
CC
= V
BS
= 15 V
I
C
= 30 A
V
IN
= 0 V  5 V, Inductive Load
(2nd Note 3)
-0.68- s
t
C(ON)
-0.47- s
t
OFF
-0.90- s
t
C(OFF)
-0.50- s
t
rr
-0.10- s
I
CES
Collector - Emitter
Leakage Current
V
CE
= V
CES
- - 250 A
V
CE
I
C
V
IN
t
ON
t
C(ON)
V
IN(ON)
10% I
C
10% V
CE
90% I
C
100% I
C
t
rr
100% I
C
0
V
CE
I
C
V
IN
t
OFF
t
C(OFF)
V
IN(OFF)
10% V
CE
10% I
C
(a) turn-on
(b) turn-off