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FSBB30CH60C Rev. D

FSBB30CH60C Smart Power Module

February 2008

Motion-SPM

FSBB30CH60C

Smart Power Module

Features

• UL Certified No.E209204(SPM27-EC package)

• Very low thermal resistance due to using DBC

• Easy PCB layout due to built in bootstrap diode

• 600V-30A 3-phase IGBT inverter bridge including control ICs

for gate driving and protection

• Divided negative dc-link terminals for inverter current sensing

applications

• Single-grounded power supply due to built-in HVIC

• Isolation rating of 2500Vrms/min.

Applications

• AC 100V ~ 253V three-phase inverter drive for small power

ac motor drives

• Home appliances applications like air conditioner and wash-

ing machine

General Description

It is an advanced motion-smart power module (Motion-SPM

)

that Fairchild has newly developed and designed to provide

very compact and high performance ac motor drives mainly tar-

geting low-power inverter-driven application like air conditioner

and washing machine. It combines optimized circuit protection

and drive matched to low-loss IGBTs. System reliability is fur-

ther enhanced by the integrated under-voltage lock-out and

short-circuit protection. The high speed built-in HVIC provides

opto-coupler-less single-supply IGBT gate driving capability that

further reduce the overall size of the inverter system design.

Each phase current of inverter can be monitored separately due

to the divided negative dc terminals.

Figure 1.

44mm

26.8mm

Top View Bottom View

Summary of content (17 pages)

PAGE 1
Motion-SPM FSBB30CH60C TM Smart Power Module Features General Description • UL Certified No.E209204(SPM27-EC package) It is an advanced motion-smart power module (Motion-SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low-power inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs.
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FSBB30CH60C Smart Power Module Integrated Power Functions • 600V-30A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figures 12 and 13.
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FSBB30CH60C Smart Power Module Pin Descriptions Pin Number Pin Name 1 VCC(L) Pin Description Low-side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-side U Phase 4 IN(VL) Signal Input for Low-side V Phase 5 IN(WL) Signal Input for Low-side W Phase Fault Output 6 VFO 7 CFOD Capacitor for Fault Output Duration Time Selection 8 CSC Capacitor (Low-pass Filter) for Short-Current Detection Input 9 IN(UH) Signal Input for High-side
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FSBB30CH60C Smart Power Module Internal Equivalent Circuit and Input/Output Pins (19) VB(W) (18) VCC(H) (17) IN(WH) (20) VS(W) (15) VB(V) (14) VCC(H) (13) IN(VH) (16) VS(V) (11) VB(U) (10) VCC(H) (9) IN(UH) (12) VS(U) (8) CSC (7) CFOD (6) VFO (5) IN(WL) (4) IN(VL) (3) IN(UL) P (27) VB VCC COM IN OUT VS W (26) VB VCC COM IN OUT VS V (25) VB VCC COM IN OUT VS U (24) C(SC) OUT(WL) C(FOD) NW (23) VFO IN(WL) OUT(VL) IN(VL) NV (22) IN(UL) (2) COM COM (1) VCC(L) VCC OUT(UL) VSL NU (21) Not
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Unless Otherwise Specified) Inverter Part Symbol VPN VPN(Surge) VCES Parameter Conditions Supply Voltage Applied between P- NU, NV, NW Supply Voltage (Surge) Applied between P- NU, NV, NW Rating Units 450 V Collector-emitter Voltage 500 V 600 V ± IC Each IGBT Collector Current TC = 25°C 30 A ± ICP Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 60 A PC Collector Dissipation TC = 25°C per One Chip TJ Operating Junction Temperature (Note 1) 106 W -40 ~ 15
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Inverter Part Symbol Parameter VCE(SAT) Collector-Emitter Saturation Voltage VCC = VBS = 15V VIN = 5V FWD Forward Voltage VIN = 0V Switching Times VPN = 300V, VCC = VBS = 15V IC = 30A VIN = 0V ↔ 5V, Inductive Load (Note 3) VF HS tON tC(ON) tOFF Conditions Min. Typ. Max. Units IC = 20A, TJ = 25°C - - 2.0 V IF = 20A, TJ = 25°C - - 2.1 V - 0.75 - μs - 0.2 - μs - 0.4 - μs - 0.1 - μs tC(OFF) - 0.1 - μs - 0.55 - μs - 0.35 - μs - 0.4 - μs tC(OFF) - 0.
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FSBB30CH60C Smart Power Module 100% I C 100% I C trr V CE IC IC V CE V IN V IN 0 tON tOFF tC(ON) V IN(ON) tC(OFF) V IN(OFF) 10% IC 90% I C 10% V CE 10% V CE 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition Switching Loss (Typical) SWITCHING LOSS(ON) VS. COLLECTOR CURRENT SWITCHING LOSS(OFF) VS.
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Symbol Parameter Conditions Min. Typ. Max. Units VF Forward Voltage IF = 0.1A, TC = 25°C - 2.5 - V trr Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns Built in Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 TC=25℃ 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Note: 6. Built in bootstrap diode includes around 15Ω resistance characteristic. Figure 6.
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Parameter Mounting Torque Limits Conditions Mounting Screw: - M3 Device Flatness Recommended 0.62N•m Units Min. Typ. Max. 0.51 0.62 0.80 N•m 0 - +120 μm - 15.00 - g Note Figure 5 Weight (+) (+) Figure 7. Flatness Measurement Position Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FSBB30CH60C FSBB30CH60C SPM27-EC - - 10 9 FSBB30CH60C Rev. D www.fairchildsemi.
PAGE 10
FSBB30CH60C Smart Power Module Time Charts of SPMs Protective Function Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition.
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c6 Protection circuit state SET Internal IGBT Gate-Emitter Voltage FSBB30CH60C Smart Power Module Lower arms control input c7 RESET c4 c3 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of the shunt resistance Fault Output Signal c5 CR circuit time constant delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF.
PAGE 12
FSBB30CH60C Smart Power Module 5V-Line SPM RPF=4.7㏀ 100Ω IN(UH) , IN(VH) , IN(WH) 100Ω CPU IN (UL) , IN (VL) , IN(WL) 100Ω 1nF VFO 1nF CPF= 1nF 1nF COM Note: 1) RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 5kΩ (typ.) pull-down resistor.
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(19) V B(W ) (18) V CC(H) RS C BS Gating W H C BSC (17) IN (W H) (20) V S(W ) C PS (15) V B(V) (14) V CC(H) RS C BS Gating VH C BSC VCC OUT COM IN W (26) VS VB VCC OUT COM IN VS V (25) (16) V S(V) C PS C P U (13) IN (VH) P (27) VB (11) V B(U) RS C BS Gating UH C BSC C PS VB (10) V CC(H) VCC (9) IN (UH) COM IN (12) V S(U) M C DCS OUT VS Vdc U (24) RF R PF (8) C SC C SC (7) C FOD RS C FOD Fault RS (5) IN (W L) RS (4) IN (VL) RS (3) IN (UL) Gating W L Gat
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FSBB30CH60C Smart Power Module Detailed Package Outline Drawings 14 FSBB30CH60C Rev. D www.fairchildsemi.
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FSBB30CH60C Smart Power Module Detailed Package Outline Drawings (Continued) 15 FSBB30CH60C Rev. D www.fairchildsemi.
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FSBB30CH60C Smart Power Module Detailed Package Outline Drawings (Continued) 16 FSBB30CH60C Rev. D www.fairchildsemi.
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