Datasheet

©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FPDB40PH60B Rev. C3
FPDB40PH60B PFC SPM® 3 Series for 2-Phase Bridgeless PFC
Absolute Maximum Ratings (T
J
= 25°C, unless otherwise specified.)
Converter Part
Notes:
2. The maximum junction temperature rating of the power chips integrated within the PFC SPM
®
product is 150°C(@T
C
≤ 100°C).
Control Part
Total System
Thermal Resistance
Notes:
3. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Symbol Item Condition Rating Unit
V
i
Supply Voltage Applied between R - S 264 V
rms
V
i(Surge)
Supply Voltage (Surge) Applied between R - S 500 V
V
PN
Output Voltage Applied between P - N 450 V
V
PN(Surge)
Output Voltage (Surge) Applied between P - N 500 V
V
CES
Collector - Emitter Voltage 600 V
±I
C
Each IGBT Collector Current T
C
= 25°C 40 A
±I
CP
Each IGBT Collector Current (Peak) T
C
= 25°C, Under 1 ms Pulse Width 70 A
P
C
Collector Dissipation T
C
= 25°C per IGBT 113 W
V
RRM
Repetitive Peak Reverse Voltage 600 V
I
FSM
Peak Forward Surge Current Single Half Sine-Wave 350 A
P
RSH
Power Rating of Shunt Resistor T
C
< 125°C 2 W
T
J
Operating Junction Temperature (Note 2) -40 ~ 150 °C
Symbol Item Condition Rating Unit
V
CC
Control Supply Voltage Applied between V
CC
- COM 20 V
V
IN
Input Signal Voltage Applied between IN - COM -0.3 ~ 17.0 V
V
FO
Fault Output Supply Voltage Applied between V
FO
- COM -0.3 ~ V
CC
+0.3 V
I
FO
Fault Output Current Sink Current at V
FO
Pin 5 mA
V
SC
Current Sensing Input Voltage Applied between C
SC
- COM -0.3~V
CC
+0.3 V
Symbol Item Condition Rating Unit
T
C
Module Case Operation Temperature -20 ~ 100 °C
T
STG
Storage Temperature -40 ~ 150 °C
V
ISO
Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat-Sink Plate
2500 V
rms
Symbol Item Condition Min. Typ. Max. Unit
R

(j-c)Q
Junction to Case Thermal Resistance
(Referenced to PKG Center)
IGBT - - 1.1 °C/W
R

(j-c)HD
High-Side Diode - - 1.9 °C/W
R

(j-c)LD
Low-Side Diode - - 1.4 °C/W