Datasheet
FPDB30PH60 PFC SPM® 3 Series for 2-Phase Bridgeless PFC
©2005 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FPDB30PH60 Rev. C3
Absolute Maximum Ratings (T
J
= 25°C, unless otherwise specified.)
Converter Part
Notes:
2. The maximum junction temperature rating of the power chips integrated within the PFC SPM
®
product is 150 C(@T
C
100C). However, to insure safe operation of the PFC
SPM product, the average junction temperature should be limited to T
J(ave)
125C (@T
C
100C)
Control Part
Total System
Thermal Resistance
Notes :
3. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Symbol Item Condition Rating Unit
V
i
Supply Voltage Applied between R - S 264 V
rms
V
i(Surge)
Supply Voltage (Surge) Applied between R - S 500 V
V
PN
Output Voltage Applied between P - N 450 V
V
PN(Surge)
Output Voltage (Surge) Applied between P - N 500 V
V
CES
Collector - Emitter Voltage 600 V
I
i
Input Current (100% Load) T
C
< 95°C, V
i
= 220 V, V
PN
= 390 V,
V
PWM
= 20 kHz
20 A
I
i(125%)
Input Current (125% Load) T
C
< 95°C, V
i
= 220V , V
PN
= 390 V,
V
PWM
= 20 kHz, 1 min Non-Repetitive
25 A
P
C
Collector Dissipation T
C
= 25°C per IGBT 83 W
P
RSH
Power Rating of Shunt Resistor T
C
< 125°C 2 W
T
J
Operating Junction Temperature (Note 2) -20 ~ 125 °C
Symbol Item Condition Rating Unit
V
CC
Control Supply Voltage Applied between V
CC
- COM 20 V
V
IN
Input Signal Voltage Applied between IN - COM -0.3 ~ 17.0 V
V
FO
Fault Output Supply Voltage Applied between V
FO
- COM -0.3 ~ V
CC
+0.3 V
I
FO
Fault Output Current Sink Current at V
FO
Pin 5 mA
V
SC
Current Sensing Input Voltage Applied between C
SC
- COM -0.3~V
CC
+0.3 V
Symbol Item Condition Rating Unit
T
C
Module Case Operation Temperature -20 ~ 100 °C
T
STG
Storage Temperature -40 ~ 125 °C
V
ISO
Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat-Sink Plate
2500 V
rms
Symbol Item Condition Min. Typ. Max. Unit
R
(j-c)Q
Junction to Case Thermal Resistance
(Referenced to PKG Center)
IGBT - - 1.2 °C/W
R
(j-c)HD
High-Side Diode - - 2.0 °C/W
R
(j-c)LD
Low-Side Diode - - 1.4 °C/W