Datasheet

FMMT549 — PNP Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. C1 2
Electrical Characteristics T
A
= 25°C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Conditions Min. Max. Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10mA, I
B
= 0 -30 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100μA, I
E
= 0 -35 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -100μA, I
C
= 0 -5.0 V
I
CBO
Collector Cutoff Current V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0, T
A
= 100°C
-100
-10
nA
μA
I
EBO
Emitter Cutoff Current V
EB
= -4.0V, I
C
=0 -100 nA
On Characteristics*
h
FE
DC Current Gain V
CE
= -2.0V, I
C
= -50mA
V
CE
= -2.0V, I
C
= -500mA
V
CE
= -2.0V, I
C
= -1A
V
CE
= -2.0V, I
C
= -2A
70
100
80
40
300
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
-500
-750
mV
mV
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -1A, I
B
= -100mA -1.25 V
V
BE
(on) Base-Emitter On Voltage I
C
= -1A, V
CE
= -2.0V -1.0 V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product I
C
= -100mA, V
CE
= -5V,
f = 100MHz
100 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
= 0, f = 1MHz 25 pF