Datasheet

FMMT549 — PNP Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. C1 1
August 2009
FMMT549
PNP Low Saturation Transistor
Features
• ThIs device is designed with high current gain and low saturation voltage
with collector currents up to 2A continuous.
• Sourced from process PB.
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations
Thermal Characteristics*
* Device mounted on FR-4 PCB 4.5” X 5”, mounting pad 0.02 in
2
of 2 oz copper.
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage -30 V
V
CBO
Collector-Base Voltage -35 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current - Continuous
- Peak Pulse Current
-1
-2
A
A
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Unit
P
D
Total Device Dissipation, by R
θJA
Derate above 25°C
500
4
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient
250
°C/W
1. Base 2. Emitter 3. Collector
SuperSOT-23
Marking : 549
1
2
3