Datasheet

FMMT449
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous. Sourced from Process NB.
Absolute Maximum Ratings* T
A = 25°C unless otherwise noted
°C-55 to +150Operating and Storage Junction Temperature Range
T
J,
T
stg
A1
2
Collector Current - Continuous
- Peak Pulse Current
I
C
V5Emitter-Base Voltage
V
EBO
V50Collector-Base Voltage
V
CBO
V30Collector-Emitter Voltage
V
CEO
Units
FMMT449
ParameterSymbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
A = 25°C unless otherwise noted
°C/W250Thermal Resistance, Junction to Ambient
R
θJA
mW
mW/°C
500
4
Total Device Dissipation*
Derate above 25°C
P
D
FMMT449
Units
Max
Characteristic
Symbol
*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in
2
of 2oz copper.
Page 1 of 2 1998Fairchild Semiconducto Corporation
fmmt449.lwpPrNB revA
FMMT449
SuperSOT
TM
-3
C
E
B