Datasheet

FFB3946 / FMB3946 — NPN & PNP General Purpose Amplifier
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3946 / FMB3946 Rev. 1.1.0 3
Electrical Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 10 mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10 μA, I
E
= 0 40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10 μA, I
C
= 0 5.0 V
I
CBO
Collector Cut-Off Current V
CB
= 30 V, I
E
= 0 50 nA
I
EBO
Emitter Cut-Off Current V
EB
= 4.0 V, I
C
= 0 50 nA
On Characteristics
h
FE
DC Current Gain
I
C
= 100 μA, V
CE
= 1.0 V 40
I
C
= 1.0 mA, V
CE
= 1.0 V 70
I
C
= 10 mA, V
CE
= 1.0 V 100 300
I
C
= 50 mA, V
CE
= 1.0 V 60
I
C
= 100 mA, V
CE
= 1.0 V 30
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA 0.25 V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA 0.9 V
Small-Signal Characteristics
f
T
Current Gain-Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
200 MHz
C
obo
Output Capacitance V
CB
= 5.0 V, f = 100 kHz 4.5 pF
C
ibo
Input Capacitance V
CB
= 0.5 V, f = 100 kHz 10 pF