Datasheet

FFB3946 / FMB3946 — NPN & PNP General Purpose Amplifier
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3946 / FMB3946 Rev. 1.1.0 2
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
4. These ratings are limiting values above which serviceability of any semiconductor advice may be impaired.
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Note:
2. PCB board size: FR-4 76 x 114 x 0.6T mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol ParameterValueUnits
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Junction and Storage Temperature -55 to +150 °C
Symbol Parameter
Maximum
Units
FFB3946 FMB3946
P
D
Total Device Dissipation 300 700 mW
Derate Above 25°C2.45.6mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 415 180 °C/W