Datasheet

FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 2
Ordering Information
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Note:
1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Note:
2. PCB size: FR-4 76 x 114 x 0.6T mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Part Number Top Mark Package Packing Method
FFB3906 .2A SC70 6L Tape and Reel
FMB3906 .2A SSOT 6L Tape and Reel
MMPQ3906 MMPQ3906 SOIC 16L Tape and Reel
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage -40 V
V
CBO
Collector-Base Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current - Continuous -200 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter
Max.
Unit
FFB3906 FMB3906 MMPQ3906
P
D
Total Device Dissipation 300 700 1,000 mW
Derate Above 25°C 2.4 5.6 8.0 mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 415 180 °C/W
Thermal Resistance, Junction to Ambient,
Effective 4 Die
125 °C/W
Thermal Resistance, Junction to Ambient,
Each Die
240 °C/W