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FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier

FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 1

December 2013

FFB3906 / FMB3906 / MMPQ3906

PNP Multi-Chip General-Purpose Amplifier

Block Diagram

Figure 1. FFB3906 Device Package Figure 2. FFB3906 Internal Connections

Figure 3. FMB3906 Device Package Figure 4. FMB3906 Internal Connections

Figure 5. MMPQ3906 Device Package Figure 6. MMPQ3906 Internal Connections

pin #1

SC70-6

Mark: .1A

Mark: .2A

SuperSOT™-6

Mark: .2A

Dot denotes pin #1

pin #1

SOIC-16

Mark: MMPQ3906

pin #1

B4E4B3E3B2E2B2E1

C4C4C3C3C2C2C1C1

Description

This device is designed for general-purpose amplifier

and switching applications at collector currents of 10 μA

to 100 mA. Sourced from Process 66.

Summary of content (10 pages)

PAGE 1
FFB3906 / FMB3906 / MMPQ3906 PNP Multi-Chip General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 μA to 100 mA. Sourced from Process 66. Block Diagram E2 E2 C2 B2 B1 C1 E1 B2 C1 C2 SC70-6 Mark: .2A .1A 1A E1 pin #1 B1 Figure 1. FFB3906 Device Package Figure 2. FFB3906 Internal Connections C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOT™-6 Mark: .2A Dot denotes pin #1 Figure 3.
PAGE 2
Part Number Top Mark Package Packing Method FFB3906 .2A SC70 6L Tape and Reel FMB3906 .2A SSOT 6L Tape and Reel MMPQ3906 MMPQ3906 SOIC 16L Tape and Reel Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
PAGE 3
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(3) IC = -1.0 mA, IB = 0 -40 V V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Base Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA Collector Cut-Off Current VCE = -30 V, VBE = 3.
PAGE 4
V CESAT - COLLECTOR EMITTER VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN 250 V CE = 1 .0V 150 100 - 40 °C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 125°C 0 VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 200 Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current β = 10 - 40 °C 1 0.8 0.8 25 °C 125 °C 0.6 - 40 °C 25 °C 0.6 125 °C 0.4 0.4 V CE = 1V 0.2 0.
PAGE 5
12 6 V CE = 5.0V f = 1.0 kHz 5 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 4 3 I C = 100 μA, R S = 200Ω 2 I C = 1.0 mA, R S = 200Ω 1 10 6 4 I C = 100 μA 2 I C = 100 μA, R S = 2.0 kΩ 0 0.1 1 10 f - FREQUENCY (kHz) 0 0.1 100 Figure 13. Noise Figure vs. Frequency 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 Figure 14. Noise Figure vs. Source Resistance 500 500 ts tf 10 I B1 = I B2 = Ic t off 100 TIME (nS) 100 TIME (nS) I C = 1.
PAGE 6
h oe - OUTPUT ADMITTANCE (μ mhos) h ie - INPUT IMPEDANCE (k Ω) 10 VCE = 10 V f = 1.0 kHz 1 0.1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Figure 19. Input Impedance 1000 V CE = 10 V f = 1.0 kHz 100 10 0.1 1 I C - COLLECTOR CURRENT ( mA) 10 Figure 20. Output Admittance V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN 1000 200 100 50 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Figure 21. Current Gain © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 www.
PAGE 7
FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions SC70 6L SYMM C L 2.00±0.20 0.65 A 0.50 MIN 6 4 B PIN ONE 1.25±0.10 1 1.90 3 0.30 0.15 (0.25) 0.40 MIN 0.10 0.65 A B 1.30 LAND PATTERN RECOMMENDATION 1.30 1.00 0.80 SEE DETAIL A 1.10 0.80 0.10 C 0.10 0.00 C 2.10±0.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE (R0.10) 0.25 0.10 0.20 A) THIS PACKAGE CONFORMS TO EIAJ SC-88, 1996. B) ALL DIMENSIONS ARE IN MILLIMETERS.
PAGE 8
FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions (Continued) SSOT 6L Figure 23. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions (Continued) SO 16L NB 10.00 9.80 A 8.89 16 9 B 4.00 3.80 6.00 PIN ONE INDICATOR 1.75 1 5.6 8 0.51 0.35 1.27 (0.30) 0.25 M 1.27 C B A 0.65 LAND PATTERN RECOMMENDATION 1.75 MAX 1.50 1.25 SEE DETAIL A 0.25 0.10 C 0.25 0.19 0.10 C 0.50 0.25 X 45° NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) GAGE PLANE A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AC, ISSUE C.
PAGE 10
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