Datasheet

FFB2907A / FMB2907A / MMPQ2907A — PNP Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2907A / FMB2907A / MMPQ2907A Rev. 1.1.0 3
Electrical Characteristics
(4)
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
(4)
I
C
= -10 mA, I
B
= 0 -60 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= -10 μA, I
E
= 0 -60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= -10 μA, I
C
= 0 -5.0 V
I
BL
Base Cut-Off Current V
CE
= -30 V, V
EB
= -0.5 V -50 nA
I
CEX
Collector Cut-Off Current V
CE
= -30 V, V
EB
= -0.5 V -50 nA
I
CBO
Collector Cut-Off Current
V
CB
= -50 V, I
E
= 0 -0.02
μA
V
CB
= -50 V, I
E
= 0, T
A
= 125°C-20
h
FE
DC Current Gain
I
C
= -0.1 mA, V
CE
= -10 V 75
I
C
= -1.0 mA, V
CE
= -10 V 100
I
C
= -10 mA, V
CE
= -10 V 100
I
C
= -150 mA, V
CE
= -10 V
(4)
100 300
I
C
= -500 mA, V
CE
= -10 V
(4)
50
V
CE
(sat)
Collector-Emitter Saturation
Voltage
(4)
I
C
= -150 mA, I
B
= -15 mA -0.4
V
I
C
= -500 mA, I
B
= -50 mA -1.6
V
BE
(sat) Base-Emitter Saturation Voltage
I
C
= -150 mA, I
B
= -15 mA
(4)
-1.3
V
I
C
= -500 mA, I
B
= -50 mA -2.6
f
T
Current Gain-Bandwidth Product
I
C
= -50 mA, V
CE
=- 20 V,
f = 100 MHz
250 MHz
C
ob
Output Capacitance V
CB
= -10 V, I
E
= 0, f = 100 kHz 6.0 pF
C
ib
Input Capacitance V
EB
= -2.0 V, I
C
= 0, f = 100 kHz 12 pF
t
on
Turn-On Time
V
CC
= -30 V, I
C
= -150 mA,
I
B1
= -15 mA
30 ns
t
d
Delay Time 8 ns
t
r
Rise Time 20 ns
t
off
Turn-Off Time
V
CC
= -6.0 V, I
C
= -150 mA,
I
B1
= I
B2
= -15 mA
80 ns
t
s
Storage Time 60 ns
t
f
Fall Time 20 ns