Datasheet

FFB2227A / FMB2227A — NPN & PNP General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2227A / FMB2227A Rev. 1.1.0 2
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
4. These Ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Note:
2. PCB board size: FR-4 76 x 114 x 0.6T mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current - Continuous 500 mA
T
J,
T
STG
Operating and Storage Junction Temperature Range - 55 to +150 °C
Symbol Parameter
Maximum
Units
FFB2227A FMB2227A
P
D
Total Device Dissipation
300 700 mV
Derate Above 25°C
2.4 5.6 mV/°C
R
θJA
Thermal Resistance, Junction to Ambient
415 180 °C/W