Datasheet

Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 10 mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
µ
A, I
E
= 0
75 V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A, I
C
= 0
5.0 V
I
CBO
Collector Cutoff Current V
CB
= 60 V, I
E
= 0 10 nA
I
EBO
Emitter Cutoff Current V
EB
= 3.0 V, I
C
= 0 10 nA
h
FE
DC Current Gain I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 150 mA, V
CE
= 1.0 V*
I
C
= 500 mA, V
CE
= 10 V*
35
50
75
100
50
40
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage* I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.3
1.0
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage* I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
1.2
2.0
V
V
NPN Multi-Chip General Purpose Amplifier
(continued)
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product I
C
= 20 mA, V
CE
= 20 V,
f = 100 MHz
300 MHz
C
obo
Output Capacitance V
CB
= 10 V, I
E
= 0, f = 100 kHz 4.0 pF
C
ibo
Input Capacitance V
EB
= 0.5 V, I
C
= 0, f = 100 kHz 20 pF
NF Noise Figure
I
C
= 100
µ
A, V
CE
= 10 V,
R
S
= 1.0 k
Ω
, f = 1.0 kHz
2.0 dB
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
t
d
Delay Time V
CC
= 30 V, V
BE(OFF)
= 0.5 V, 8 ns
t
r
Rise Time I
C
= 150 mA, I
B1
= 15 mA 20 ns
t
s
Storage Time V
CC
= 30 V, I
C
= 150 mA, 180 ns
t
f
Fall Time I
B1
= I
B2
= 15 mA 40 ns
FFB2222A / FMB2222A / MMPQ2222A