Datasheet

FDS9934C Rev D(W)
Typical Characteristics: Q2 (P-Channel)
0
1
2
3
4
5
0 2 4 6 8 10
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -5A
V
DS
= -4V
-8V
-6V
0
400
800
1200
1600
0 4 8 12 16 20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
1s
100ms
100µs
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
10s
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 135
o
C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9934C