Datasheet

FDS9934C Rev D(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= –250 µA
Q1
Q2
20
–20
V
∆BVDSS
∆T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
Q1
Q2
14
–14
mV/°C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 16V, V
GS
= 0 V
V
DS
= –16V, V
GS
= 0 V
Q1
Q2
1
–1
µA
I
GSS
Gate-Body Leakage V
GS
= ±8 V, V
DS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
Q1
Q2
±100
±100
nA
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Q1
Q2
0.6
–0.6
1
–0.9
1.5
–1.2
V
∆VGS(th)
???∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 uA, Referenced to 25°C
I
D
= 250 uA, Referenced to 25°C
Q1
Q2
–3
3
mV/°C
V
GS
= 4.5 V, I
D
= 6.5 A
V
GS
= 2.5 V, I
D
= 5.4 A
V
GS
= 4.5 V, I
D
=6.5A, T
J
=125°C
Q1 25
35
35
30
43
50
mΩ
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= –4.5 V, I
D
= –3.2 A
V
GS
= –2.5 V, I
D
= –1.0 A
V
GS
= –4.5 V,I
D
= –3.2 A, T
J
=125°C
Q2 43
64
55
55
90
76
mΩ
I
D(on)
On-State Drain Current V
GS
= 4.5V, V
DS
= 5 V
V
GS
= –4.5 V, V
DS
= – 5 V
Q1
Q2
15
–16
A
g
FS
Forward Transcoductance V
DS
= –5 V, I
D
= 6.5 A
V
DS
= 5 V, I
D
= – 5.5 A
Q1
Q2
22
14
S
S
Dynamic Characteristics
C
iss
Input Capacitance Q1
Q2
650
955
pF
C
oss
Output Capacitance Q1
Q2
150
215
pF
C
rss
Reverse Transfer Capacitance
Q1
V
DS
= 10V, V
GS
= 0 V,
f = 1.0 MHz
Q2
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
Q1
Q2
85
115
pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz Q1
Q2
1.4
4.9
Ω
FDS9934C