Datasheet

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©2010 Fairchild Semiconductor Corporation
FDMS86201 Rev.C2
FDMS86201 N-Channel Shielded Gate PowerTrench
®
MOSFET
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 120 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 95 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 96 V, V
GS
= 0 V 1 μA
I
GSS
Gate to Source Leakage Current, Forward V
GS
= ±20 V, V
DS
= 0 V 100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 2.0 2.6 4.0 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -10 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 11.6 A 9.6 11.5
mΩV
GS
= 6 V, I
D
= 10.7 A 11.8 14.5
V
GS
= 10 V, I
D
= 11.6 A, T
J
= 125 °C 15.7 21.5
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 11.6 A 39 S
C
iss
Input Capacitance
V
DS
= 60 V, V
GS
= 0 V,
f = 1 MHz
2056 2735 pF
C
oss
Output Capacitance 322 430 pF
C
rss
Reverse Transfer Capacitance 15 25 pF
R
g
Gate Resistance 1.2 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 60 V, I
D
= 11.6 A,
V
GS
= 10 V, R
GEN
= 6 Ω
13 24 ns
t
r
Rise Time 7.7 16 ns
t
d(off)
Turn-Off Delay Time 27 44 ns
t
f
Fall Time 7.1 15 ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 60 V,
I
D
= 11.6 A
32 46 nC
Q
g
Total Gate Charge V
GS
= 0 V to 5 V 18 26 nC
Q
gs
Gate to Source Charge 8.1 nC
Q
gd
Gate to Drain “Miller” Charge 7.1 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2 A (Note 2) 0.69 1.2
V
V
GS
= 0 V, I
S
= 11.6 A (Note 2) 0.78 1.3
t
rr
Reverse Recovery Time
I
F
= 11.6 A, di/dt = 100 A/μs
66 106 ns
Q
rr
Reverse Recovery Charge 88 140 nC
50 °C/W when mounted on a
1 in
2
pad of 2 oz copper
125 °C/W when mounted on a
minimum pad of 2 oz copper.
a)
b)
Notes:
1. R
θJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
J
= 25 °C; N-ch: L = 1 mH, I
AS
= 23 A, V
DD
= 120 V, V
GS
= 10 V. 100% test at L = 0.1 mH, I
AS
= 50 A.
G
DF DS
SF SS
G
DF
DS
SF
SS