Datasheet

FDMS86101DC N-Channel Dual Cool
TM
Shielded Gate PowerTrench
®
MOSFET
www.fairchildsemi.com
2
©2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 100 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25°C 70 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 80 V, V
GS
= 0 V 1 μA
I
GSS
Gate to Source Leakage Current V
GS
= ±20 V, V
DS
= 0 V ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA22.74V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -10 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 14.5 A 6 7.5
mΩV
GS
= 6 V, I
D
= 11.5 A 8.3 12
V
GS
= 10 V, I
D
= 14.5 A, T
J
= 125 °C 10 13
g
FS
Forward Transconductance V
DD
= 10 V, I
D
= 14.5 A 44 S
C
iss
Input Capacitance
V
DS
= 50 V, V
GS
= 0 V,
f = 1 MHz
2354 3135 pF
C
oss
Output Capacitance 467 625 pF
C
rss
Reverse Transfer Capacitance 23 35 pF
R
g
Gate Resistance 0.1 1.4 3 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 50 V , I
D
= 14.5 A,
V
GS
= 10 V, R
GEN
= 6 Ω
14 25 ns
t
r
Rise Time 8.2 17 ns
t
d(off)
Turn-Off Delay Time 25 40 ns
t
f
Fall Time 5.5 11 ns
Q
g(TOT)
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 50 V
I
D
= 14.5 A
31 44 nC
Total Gate Charge V
GS
= 0 V to 5 V 18 25 nC
Q
gs
Total Gate Charge 8.3 nC
Q
gd
Gate to Drain “Miller” Charge 7 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.7 A (Note 2) 0.71 1.2
V
V
GS
= 0 V, I
S
= 14.5 A (Note 2) 0.78 1.3
t
rr
Reverse Recovery Time
I
F
= 14.5 A, di/dt = 100 A/μs
54 87 ns
Q
rr
Reverse Recovery Charge 62 99 nC