Datasheet

FDMS8570SDC N-Channel PowerTrench
®
SyncFET
TM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
www.fairchildsemi.com
7
SyncFET
TM
Schottky body diode
Characteristics
Fairchild’s SyncFET
TM
process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8570SDC.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0 50 100 150 200 250
-5
0
5
10
15
20
25
30
di/dt = 300 A/μs
CURRENT (A)
TIME (ns)
0 5 10 15 20 25
10
-6
10
-5
10
-4
10
-3
10
-2
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
DSS
, REVERSE LEAKAGE CURRENT (A)
V
DS
, REVERSE VOLTAGE (V)
Typical Characteristics (continued)
Figure 14. FDMS8570SDC SyncFET
TM
body
diode reverse recovery characteristic
Figure 15. SyncFET
TM
body diode reverse
leakage versus drain-source voltage