Datasheet

FDMS8570SDC N-Channel PowerTrench
®
SyncFET
TM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
www.fairchildsemi.com
4
Typical Characteristics T
J
= 25 °C unless otherwise noted
Figure 1.
0 0.3 0.6 0.9 1.2 1.5
0
20
40
60
80
100
V
GS
= 3.5 V
V
GS
= 3 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On Region Characteristics F i g u r e 2 .
020406080100
0.5
0.9
1.8
2.7
3.6
4.5
V
GS
= 2.5 V
V
GS
= 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
V
GS
= 3 V
V
GS
= 10 V
N o rmalize d O n - R e s i s tance
vs Drain Current and Gate Voltage
Fi g u r e 3 . Nor m a liz e d On R e si s t anc e
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
I
D
= 28 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
2345678910
1
2
3
4
5
6
7
8
9
T
J
= 125
o
C
I
D
= 28 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
O n -R es is t an ce v s G at e to
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
T
J
= 150
o
C
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.00.20.40.60.81.01.2
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra in D io d e
Forward Voltage vs Source Current