Datasheet
FDMS8570S N-Channel PowerTrench
®
SyncFET
TM
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
www.fairchildsemi.com
2
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 1 mA, V
GS
= 0 V 25 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, referenced to 25 °C 23 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 20 V, V
GS
= 0 V 500 μA
I
GSS
Gate to Source Leakage Current V
GS
= +12 V/-8 V, V
DS
= 0 V ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 1 mA 1.1 1.5 2.2 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, referenced to 25 °C -3 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 24 A 2.1 2.8
mΩV
GS
= 4.5 V, I
D
= 22 A 2.4 3.3
V
GS
= 10 V, I
D
= 24 A, T
J
= 125 °C 2.9 3.9
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 24 A 215 S
C
iss
Input Capacitance
V
DS
= 13 V, V
GS
= 0 V,
f = 1 MHz
2825 pF
C
oss
Output Capacitance 662 pF
C
rss
Reverse Transfer Capacitance 94 pF
R
g
Gate Resistance 0.8 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 13 V, I
D
= 24 A,
V
GS
= 10 V, R
GEN
= 6 Ω
11 ns
t
r
Rise Time 4ns
t
d(off)
Turn-Off Delay Time 33 ns
t
f
Fall Time 3ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 13 V,
I
D
= 24 A
42 nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V 22 nC
Q
gs
Gate to Source Gate Charge 6.4 nC
Q
gd
Gate to Drain “Miller” Charge 4.4 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2 A (Note 2) 0.6 0.8
V
V
GS
= 0 V, I
S
= 24 A (Note 2) 0.8 1.2
t
rr
Reverse Recovery Time
I
F
= 24 A, di/dt = 300 A/μs
22 ns
Q
rr
Reverse Recovery Charge 19 nC
NOTES:
1. R
θJA
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
θJC
is guaranteed by design while R
θCA
is determined
by the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
AS
of 45 mJ is based on starting T
J
= 25 °C, L = 0.4 mH, I
AS
= 15 A, V
DD
= 23 V, V
GS
= 10 V. 100% test at L = 0.1 mH, I
AS
= 23.8 A.
a)
50 °C/W when mounted on a
1 in
2
pad of 2 oz copper
125 °C/W when mounted on
a minimum pad of 2 oz
copper.
b)
G
DF
DS
SF
SS
G
DF
DS
SF
SS