Datasheet

FDMS8558SDC N-Channel PowerTrench
®
SyncFET
TM
©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C2
www.fairchildsemi.com
2
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 1 mA, V
GS
= 0 V 25 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, referenced to 25 °C 24 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 20 V, V
GS
= 0 V 500 μA
I
GSS
Gate to Source Leakage Current V
GS
= +12 V/-8 V, V
DS
= 0 V ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 1 mA 1.1 1.4 2.2 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, referenced to 25 °C -3 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 38 A 1.1 1.5
mΩV
GS
= 4.5 V, I
D
= 36 A 1.3 1.7
V
GS
= 10 V, I
D
= 38 A, T
J
= 125 °C 1.6 2.1
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 38 A 317 S
C
iss
Input Capacitance
V
DS
= 13 V, V
GS
= 0 V,
f = 1 MHz
5118 pF
C
oss
Output Capacitance 1508 pF
C
rss
Reverse Transfer Capacitance 195 pF
R
g
Gate Resistance 0.9 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 13 V, I
D
= 38 A,
V
GS
= 10 V, R
GEN
= 6 Ω
14 ns
t
r
Rise Time 8ns
t
d(off)
Turn-Off Delay Time 51 ns
t
f
Fall Time 7ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 13 V,
I
D
= 38 A
81 nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V 38 nC
Q
gs
Gate to Source Gate Charge 10 nC
Q
gd
Gate to Drain “Miller” Charge 9.7 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2 A (Note 2) 0.6 0.8
V
V
GS
= 0 V, I
S
= 38 A (Note 2) 0.8 1.2
t
rr
Reverse Recovery Time
I
F
= 38 A, di/dt = 300 A/μs
35 ns
Q
rr
Reverse Recovery Charge 49 nC