Datasheet
www.fairchildsemi.com
2
FDMS8320L Rev.C3
FDMS8320L N-Channel PowerTrench
®
MOSFET
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 40 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 21 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 32 V, V
GS
= 0 V 1 μA
I
GSS
Gate to Source Leakage Current V
GS
= ±20 V, V
DS
= 0 V 100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 1.0 1.7 3.0 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -6 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 32 A 0.8 1.1
mΩV
GS
= 4.5 V, I
D
= 27 A 1.0 1.5
V
GS
= 10 V, I
D
= 32 A, T
J
= 125 °C 1.2 1.7
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 32 A 206 S
C
iss
Input Capacitance
V
DS
= 20 V, V
GS
= 0 V,
f = 1 MHz
8350 11110 pF
C
oss
Output Capacitance 2840 3780 pF
C
rss
Reverse Transfer Capacitance 169 295 pF
R
g
Gate Resistance 0.1 1.3 2.6 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 20 V, I
D
= 32 A,
V
GS
= 10 V, R
GEN
= 6 Ω
17 30 ns
t
r
Rise Time 19 35 ns
t
d(off)
Turn-Off Delay Time 68 110 ns
t
f
Fall Time 17 30 ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 20 V,
I
D
= 32 A
121 170 nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V 58 117 nC
Q
gs
Gate to Source Charge 19.2 nC
Q
gd
Gate to Drain “Miller” Charge 16.5 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.65 1.1
V
V
GS
= 0 V, I
S
= 32 A (Note 2) 0.74 1.2
t
rr
Reverse Recovery Time
I
F
= 32 A, di/dt = 100 A/μs
68 108 ns
Q
rr
Reverse Recovery Charge 59 95 nC
t
rr
Reverse Recovery Time
I
F
= 32 A, di/dt = 300 A/μs
53 85 ns
Q
rr
Reverse Recovery Charge 104 167 nC
50 °C/W when mounted on a
1 in
2
pad of 2 oz copper
125 °C/W when mounted on a
minimum pad of 2 oz copper.
a)
b)
Notes:
1. R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
J
= 25 °C; N-ch: L = 0.3 mH, I
AS
= 42 A, V
DD
= 36 V, V
GS
= 10 V.
G
DF
DS
SF
SS
G
DF
DS
SF
SS