Datasheet
www.fairchildsemi.com
2
FDMS8018 Rev.C
FDMS8018 N-Channel PowerTrench
®
MOSFET
50 °C/W when mounted on a
1 in
2
pad of 2 oz copper
125 °C/W when mounted on a
minimum pad of 2 oz copper.
a)
b)
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 30 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 14 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1 μA
I
GSS
Gate to Source Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 1.0 1.5 3.0 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -6 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 30 A 1.5 1.8
mΩV
GS
= 4.5 V, I
D
= 26 A 1.9 2.4
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C 2.2 2.7
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 30 A 194 S
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
3935 5235 pF
C
oss
Output Capacitance 1380 1835 pF
C
rss
Reverse Transfer Capacitance 137 210 pF
R
g
Gate Resistance 0.9 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 30 A,
V
GS
= 10 V, R
GEN
= 6 Ω
15 27 ns
t
r
Rise Time 7.3 15 ns
t
d(off)
Turn-Off Delay Time 38 62 ns
t
f
Fall Time 4.8 10 ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V,
I
D
= 30 A
58 61 nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V 28 39 nC
Q
gs
Gate to Source Charge 10.3 nC
Q
gd
Gate to Drain “Miller” Charge 7.7 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.67 1.1
V
V
GS
= 0 V, I
S
= 30 A (Note 2) 0.77 1.2
t
rr
Reverse Recovery Time
I
F
= 30 A, di/dt = 100 A/μs
43 69 ns
Q
rr
Reverse Recovery Charge 25 40 nC
t
rr
Reverse Recovery Time
I
F
= 30 A, di/dt = 300 A/μs
34 55 ns
Q
rr
Reverse Recovery Charge 46 72 nC
Notes:
1. R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
J
= 25 °C; N-ch: L = 0.3 mH, I
AS
= 29 A, V
DD
= 27 V, V
GS
= 10 V.
4.As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
G
DF
DS
SF
SS
G
DF
DS
SF
SS