Datasheet

www.fairchildsemi.com
2
FDMS7672 Rev.
D
FDMS7672 N-Channel PowerTrench
®
MOSFET
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 µA, V
GS
= 0 V 30 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, referenced to 25 °C 15 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1 µA
I
GSS
Gate to Source Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 µA 1.25 2.0 3.0 V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, referenced to 25 °C -7 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 19 A 3.6 5.0
mΩV
GS
= 4.5 V, I
D
= 15 A 5.2 6.9
V
GS
= 10 V, I
D
= 19 A, T
J
= 125 °C 4.9 6.8
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 19 A 64 S
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
2225 2960 pF
C
oss
Output Capacitance 685 910 pF
C
rss
Reverse Transfer Capacitance 90 130 pF
R
g
Gate Resistance 0.7 1.5 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 19 A,
V
GS
= 10 V, R
GEN
= 6 Ω
13 23 ns
t
r
Rise Time 510ns
t
d(off)
Turn-Off Delay Time 25 40 ns
t
f
Fall Time 410ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V,
I
D
= 19 A
31 44 nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V 14 19 nC
Q
gs
Gate to Source Charge 7.6 nC
Q
gd
Gate to Drain “Miller” Charge 3.7 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.7 0.95
V
V
GS
= 0 V, I
S
= 19 A (Note 2) 0.8 1.1
t
rr
Reverse Recovery Time
I
F
= 19 A, di/dt = 100 A/µs
32 51 ns
Q
rr
Reverse Recovery Charge 14 24 nC
t
a
Reverse Recovery Fall Time 15 nC
t
b
Reverse Recovery Rise Time 17 nC
S Softness (t
b
/t
a
) 1.1
t
rr
Reverse Recovery Time
I
F
= 19 A, di/dt = 300 A/µs
26 42 ns
Q
rr
Reverse Recovery Charge 25 40 nC
Notes:
1. R
θJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. E
AS
of 72 mJ is based on starting T
J
= 25 °C, L = 1 mH, I
AS
= 12 A, V
DD
= 27 V, V
GS
= 10 V. 100% test at L = 0.3 mH, I
AS
= 17 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
a. 50 °C/W when mounted on a
1 in
2
pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.