Datasheet

www.fairchildsemi.com
2
©2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C4
FDMS7650DC N-Channel Dual Cool
TM
PowerTrench
®
MOSFET
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 30 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 12 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1 μA
I
GSS
Gate to Source Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 1.1 1.9 2.7 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -7 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 36 A 0.6 0.99
mΩV
GS
= 4.5 V, I
D
= 32 A 1 1.55
V
GS
= 10 V, I
D
= 36 A, T
J
= 125 °C 0.9 1.5
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 36 A 225 S
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
11100 14765 pF
C
oss
Output Capacitance 3440 4575 pF
C
rss
Reverse Transfer Capacitance 205 310 pF
R
g
Gate Resistance 1.3 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 36 A,
V
GS
= 10 V, R
GEN
= 6 Ω
29 46 ns
t
r
Rise Time 28 45 ns
t
d(off)
Turn-Off Delay Time 81 130 ns
t
f
Fall Time 20 32 ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V,
I
D
= 36 A
147 206 nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V 62 87 nC
Q
gs
Gate to Source Charge 38 nC
Q
gd
Gate to Drain “Miller” Charge 9.7 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.7 1.2
V
V
GS
= 0 V, I
S
= 36 A (Note 2) 0.8 1.3
t
rr
Reverse Recovery Time
I
F
= 36 A, di/dt = 100 A/μs
75 120 ns
Q
rr
Reverse Recovery Charge 61 98 nC