Datasheet

FDMS5352 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com3
©2
009 Fairchild Semiconductor Corporation
FDMS5352 Rev.C
1
Typical Characteristics T
J
= 25°C unless otherwise noted
Figure 1.
0.00.51.01.52.0
0
20
40
60
80
100
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
V
GS
= 4V
V
GS
= 3V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
020406080100
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT(A)
V
GS
= 4V
V
GS
= 3.5V
V
GS
= 3V
V
GS
=4.5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I
D
= 13.6A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
246810
0
5
10
15
20
I
D
= 13.6A
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(m:)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
O n -R es i s t an ce v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
20
40
60
80
100
V
DS
= 5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current