Datasheet

FDMS5352 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com2
©2
009 Fairchild Semiconductor Corporation
FDMS5352 Rev.C
1
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250PA, V
GS
= 0V 60 V
'BV
DSS
'T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250PA, referenced to 25°C 57 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
GS
= 0V, V
DS
= 48V, 1 PA
I
GSS
Gate to Source Leakage Current V
GS
= ±20V, V
DS
= 0V ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250PA 1.0 1.8 3.0 V
'V
GS(th)
'T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250PA, referenced to 25°C -6.6 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 13.6A 5.6 6.7
m:V
GS
= 4.5V, I
D
= 12.3A 6.7 8.2
V
GS
= 10V, I
D
= 13.6A, T
J
= 125°C 9.7 11.6
g
FS
Forward Transconductance V
DD
= 5V, I
D
= 13.6A 76 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
5220 6940 pF
C
oss
Output Capacitance 410 545 pF
C
rss
Reverse Transfer Capacitance 225 335 pF
R
g
Gate Resistance f = 1MHz 1.3 :
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 30V, I
D
= 13.6A,
V
GS
= 10V, R
GEN
= 6:
19 34 ns
t
r
Rise Time 11 21 ns
t
d(off)
Turn-Off Delay Time 58 93 ns
t
f
Fall Time 715ns
Q
g
Total Gate Charge V
GS
= 0 V t o 1 0 V
V
DD
= 30V,
I
D
= 13.6A
93 131 nC
Q
g
Total Gate Charge V
GS
= 0V to 5V 48 67 nC
Q
gs
Gate to Source Charge 14 nC
Q
gd
Gate to Drain “Miller” Charge 17 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
= 13.6A (Note 2) 0.8 1.3
V
V
GS
= 0V, I
S
= 2.1A (Note 2) 0.7 1.2
t
rr
Reverse Recovery Time
I
F
= 13.6A, di/dt = 100A/Ps
39 63 ns
Q
rr
Reverse Recovery Charge 48 77 nC
NOTES:
1. R
TJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJC
is guaranteed by design while R
TCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. Starting T
J
= 25°C, L = 3mH, I
AS
= 20A, V
DD
= 60V, V
GS
= 10V
a. 50°C/W when mounted on a
1 in
2
pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.