Datasheet

FDMS3672 N-Channel UltraFET Trench MOSFET
FDMS3672 Rev.C1
www.fairchildsemi.com
3
Typical Characteristics T
J
= 25°C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
V
GS
= 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
GS
= 6V
V
GS
= 5V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 102030405060
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT(A)
V
GS
= 8V
V
GS
= 6V
V
GS
= 5V
V
GS
= 10V
N o rmali z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N or m a l i z e d O n - R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
= 7.4A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
4.5 6.0 7.5 9.0
10
20
30
40
50
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 7.4A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
O n -R es is t an ce v s G at e to
Source Voltage
Figure 5. Transfer Characteristics
2345678
0
5
10
15
20
25
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra in D io d e
Forward Voltage vs Source Current