Datasheet

FDMS3602S PowerTrench
®
Power Stage
©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FDMS3602S Rev.C5
Typical Characteristics (Q2 N-Channel) T
J
= 25 °C unless otherwise noted
Figure 14.
On- Region Characteristics Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 16. Normalized On-Resistance
vs Junction Temperature
Figure 17. On-Resistance vs Gate to
Source Voltage
Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
0.0 0.2 0.4 0.6 0.8 1.0
0
20
40
60
80
100
V
GS
= 4 V
V
GS
= 3 V
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
020406080100
0
2
4
6
8
V
GS
= 3 V
V
GS
= 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4 V
V
GS
= 4.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.8
1.0
1.2
1.4
1.6
I
D
= 26 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
2
4
6
8
10
12
T
J
= 125
o
C
I
D
= 26 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.52.02.53.03.54.0
0
20
40
60
80
100
T
J
= 125
o
C
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
200
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)