Datasheet

FDMS0312S N-Channel PowerTrench
®
SyncFET
TM
FDMS0312S Rev.D
www.fairchildsemi.com6
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS0312S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Typical Characteristics (continued)
Figure 14. FDMS0312S SyncFET body
diode reverse recovery characteristic
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
0 5 10 15 20 25 30
10
-6
10
-5
10
-4
10
-3
10
-2
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
DSS
, REVERSE LEAKAGE CURRENT (A)
V
DS
, REVERSE VOLTAGE (V)
0306090120150
-5
0
5
10
15
20
di/dt = 300 A/Ps
CURRENT (A)
TIME (ns)