Datasheet

FDMC7680 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com
2
©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C5
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 30 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 15 mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V 1
μA
T
J
= 125 °C 250
I
GSS
Gate to Source Leakage Current V
GS
= 20 V, V
DS
= 0 V 100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 1.2 2.0 3.0 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -6 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 14.8 A 5.8 7.2
mΩ
V
GS
= 4.5 V, I
D
= 12.4 A 7.3 9.5
V
GS
= 10 V, I
D
= 14.8 A
T
J
= 125 °C
7.4 9.2
g
FS
Forward Transconductance V
DD
= 5 V, I
D
= 14.8 A 68 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
2145 2855 pF
C
oss
Output Capacitance 770 1020 pF
C
rss
Reverse Transfer Capacitance 75 115 pF
R
g
Gate Resistance 0.5 1.6 Ω
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 14.8 A,
V
GS
= 10 V, R
GEN
= 6 Ω
12 22 ns
t
r
Rise Time 4 10 ns
t
d(off)
Turn-Off Delay Time 25 40 ns
t
f
Fall Time 3 10 ns
Q
g(TOT)
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V
I
D
= 14.8 A
30 42 nC
Total Gate Charge V
GS
= 0 V to 4.5 V 14 19 nC
Q
gs
Total Gate Charge 7 nC
Q
gd
Gate to Drain “Miller” Charge 4 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 14.8 A (Note 2) 0.84 1.2
V
V
GS
= 0 V, I
S
= 1.9 A (Note 2) 0.73 1.2
t
rr
Reverse Recovery Time
I
F
= 14.8 A, di/dt = 100 A/μs
34 54 ns
Q
rr
Reverse Recovery Charge 15 24 nC
NOTES:
1: R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3: E
AS
of 72 mJ is based on starting T
J
= 25
o
C, L = 1 mH, I
AS
= 12 A, V
DD
= 27 V, V
GS
= 10 V.
a. 53 °C/W when mounted on
a 1 in
2
pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper